M58LW032C |
RFQ for M58LW032C Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M58LW032C | - | TSOP56 | 04+ |
Stressing the device above the ratings listed in Table 1, Absolute Maximum Ratings, may cause ermanent damage to the device. These are tress ratings only and operation of the device at hese or any other conditions above those indicated n the Operating sections of this specification isnot implied. Exposure to Absolute Maximum Rating onditions for extended periods may affect device eliability. Refer also to the TMicroelectronics SURE Program and other relevant uality documents.
Features |
| ` WIDE x16 DATA BUS for HIGH BANDWIDTH` SUPPLY VOLTAGE VDD = 2.7 to 3.6V core supply voltage for Program, rase and Read operations VDDQ = 1.8 to VDD for I/O Buffers` SYNCHRONOUS/ASYNCHRONOUS READ Synchronous Burst read Asynchronous Random Read Asynchronous Address Latch Controlled ead Page Read` ACCESS TIME Synchronous Burst Read up to 56MHz Asynchronous Page Mode Read 90/25ns, 10/25ns Random Read 90ns, 110ns` PROGRAMMING TIME 16 Word Write Buffer 12s Word effective programming time` 32 UNIFORM 64 KWord MEMORY BLOCKS` ENHANCED SECURITY Block Protection/ Unprotection Smart Protection: irreversible block locking ystem VPEN signal for Program Erase Enable 128 bit Protection Register with 64 bit Unique ode in OTP area` PROGRAM and ERASE SUSPEND` COMMON FLASH INTERFACE` 100,000 PROGRAM/ERASE CYCLES per LOCK` ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code M58LW032C : 8822h |
|
Symbol |
Parameter |
Value
|
Unit | |
|
Min |
Max | |||
|
TBIAS |
Temperature Under Bias |
40 |
125 |
°C |
|
TSTG |
Storage Temperature |
55 |
150 |
°C |
|
VIO |
Input or Output Voltage |
0.6 |
VDDQ +0.6 |
V |
|
VDD, VDDQ |
Supply Voltage |
0.6 |
5.0 |
V |
